Group II-VI semiconductor devices

ABSTRACT

Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 10 16  atoms·cm −3 , the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm 2 /V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.60/471,916, filed May 20, 2003, U.S. Provisional Application No.60/488,677, filed Jul. 18, 2003, and U.S. Provisional Application No.60/560,779, filed Apr. 8, 2004, which applications are incorporated byreference.

BACKGROUND OF THE INVENTION

The present invention provides group II-VI semiconductor devices andmethods of fabrication.

As used herein, the group II-VI semiconductor devices include devicesfabricated from group II-VI semiconductor compounds which include groupII elements selected from zinc, cadmium, the alkaline earth metals suchas beryllium, magnesium calcium, strontium, and barium, and mixturesthereof, and group VI elements selected from oxygen, sulfur, selenium,tellurium, and mixtures thereof. The group II-VI semiconductor compoundsmay be doped with one or more p-type dopant. Such p-type dopantsinclude, but are not limited to, nitrogen, phosphorus, arsenic,antimony, bismuth, copper, chalcogenides of the foregoing, and mixturesthereof. Zinc oxide and zinc sulfide are two presently preferred groupII-VI semiconductor compounds.

Zinc oxide (ZnO) and zinc sulfide are wide band gap semiconductors withpotential for use in electrically excited devices such as light emittingdevices (LEDs), laser diodes (LDs), field effect transistors (FETs),photodetectors operating in the ultraviolet and at blue wavelengths ofthe visible spectrum, and other similar devices. Gallium nitride (GaN)is becoming more commonly used as a semiconductor material for theelectronic devices mentioned above.

Zinc oxide has several advantages over GaN. For instance, ZnO has asignificantly larger exciton binding energy than GaN, which suggeststhat ZnO-based lasers should have more efficient optical emission anddetection. Zinc oxide drift mobility saturates at higher fields andhigher values than GaN, potentially leading to higher frequency deviceperformance. The cost and ease of manufacture of zinc oxide isattractive when compared to other common semiconductor materials. Zincoxide has superior radiation-resistance (2 MeV at 1.2×10¹⁷electrons/cm²) compared to GaN, which is desirable for radiationhardened electronics. Zinc oxide has high thermal conductivity (0.54W/cm·K). Zinc oxide has strong two-photon absorption with high damagethresholds, rendering it ideal for optical power limiting devices.Unlike GaN, zinc oxide does not form polytypes or crystal latticestacking irregularities.

N-type zinc oxide semiconductor materials are known and relatively easyto prepare, such as ZnO doped with aluminum, gallium, or other knownn-type dopants. P-type zinc oxide semiconductor materials aretheoretically possible, but have been difficult to prepare. D.C. Look etal., “The Future of ZnO Light Emitters,” Phys. Stat. Sol., 2004,summarize data on p-type ZnO samples reported in the literature. Thebest reported ZnO samples have resistivity values of 0.5 ohm·cm (N/Gadopants) and 0.6 ohm·cm (P dopant). Many of the reported p-type zincoxide samples tend to be light, heat, oxygen, and moisture sensitive.Some convert to n-type material over time. Their stability has beenquestioned. Some of the more-stable p-type zinc oxide materials reportedin the literature are prepared using complex and expensive fabricationprocesses, such as molecular beam epitaxy. No commercially viable p-typezinc oxide semiconductor materials are currently known. Therefore, itwould be an advancement in the art to provide commercially viable p-typezinc oxide semiconductor materials. More particularly, it would be anadvancement in the art to provide commercially viable p-type group II-VIsemiconductor materials which may be used to prepare group II-VIsemiconductor devices.

BRIEF SUMMARY OF THE INVENTION

The present invention is drawn to semiconductor devices that containgroup II-VI semiconductor materials. The devices may include a p-njunction containing a p-type group II-VI semiconductor material and ann-type semiconductor material. The p-type group II-VI semiconductorincludes single crystal group II-VI semiconductors containing atoms ofgroup II elements, atoms of group VI elements, and one or more p-typedopants. The p-type dopant concentration is greater than about 10¹⁶atoms·cm⁻³, the semiconductor resistivity is less than about 0.5 ohm·cm,and the carrier mobility is greater than about 0.1 cm²/V·s. Thesemiconductor devices may include light emitting diodes, laser diodes,field effect transistors, and photodetectors.

The group II elements include, but are not limited to, zinc, cadmium,alkaline earth metals, and mixtures thereof. The group VI elementsinclude, but are not limited to, oxygen, sulfur, selenium, tellurium,and mixtures thereof. The p-type dopant includes, but is not limited to,nitrogen, phosphorus, arsenic, antimony, bismuth, copper, andchalcogenides of the foregoing, and mixtures thereof. Zinc oxide andzinc sulfide are two currently preferred group II-VI semiconductormaterials.

The semiconductor device includes group II-VI semiconductor materialsdeposited as a thin film onto a self supporting surface. The selfsupporting surface may be crystalline, polycrystalline, or amorphous.The thin film is preferably deposited by a commercially viable chemicaldeposition process, such as, but not limited to, RF sputtering, CVD(chemical vapor deposition), MOCVD (metal organic chemical vapordeposition), spin coating, electrophoresis, and hydrothermal growthprocesses.

A variety of useful semiconductor devices may be prepared within thescope of the present invention, including but not limited to, lightemitting diodes, laser diodes, field effect transistors, andphotodetectors. For semiconductor devices designed to emit light, theemitted light may have a wavelength in the range from about 207 nm toabout 810 nm. Specific light wavelengths, such as 441.6 nm and 325 nm,may be emitted.

Advantageously, the n-type semiconductor material is an n-type groupII-VI semiconductor compatible with the p-type group II-VI semiconductormaterial. Typical n-type dopants include, but are not limited to, ionsof Al, Ga, B, H, Yb and other rare earth elements, Y, Sc, and mixturesthereof.

Additional dopants, alloys, or semiconductor layers may be used tooptimize the performance of the device. For example, the group II-VIsemiconductor material may further include magnesium oxide or cadmiumoxide to control the band gap. Multiple Quantum Wells may also but usedto optimize or control the device performance.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

A more particular description of the invention briefly described abovewill be rendered by reference to specific embodiments thereof which areillustrated in the appended drawings. These drawings depict only typicalembodiments of the invention and are not therefore to be considered tobe limiting of its scope. The invention will be described and explainedwith additional specificity and detail through the use of theaccompanying drawings in which:

FIG. 1 is a schematic representation of a sputtering system used in thefabrication of certain p-type group II-VI semiconductor materials.

FIG. 2 is a graph X-ray Photoelectron Spectroscopy (XPS) of arsenicdoped p-type zinc oxide.

FIG. 3 is a graph of photoluminescence spectra comparing undoped, bulk,n-type zinc oxide with phosphorous doped and arsenic doped p-type zincoxide.

FIG. 4 is a graph of the Hall measurements showing sheet resistance andcarrier mobility vs. temperature for arsenic doped p-type zinc oxide.

FIG. 5 is a Secondary Ion Mass Spectroscopy (SIMS) graph of an arsenicdoped ZnO film measured against a calibrated standard.

FIG. 6 is graph of the X-ray diffraction pattern generated by sputteredarsenic doped polycrystalline zinc oxide.

FIG. 7 is a graph of the X-ray diffraction pattern generated by a zincoxide thin film within the scope of the present invention showing singlecrystal (002) plane.

FIG. 8 is a Secondary Ion Mass Spectroscopy (SIMS) graph of an antimonydoped ZnO film.

FIG. 9 is a schematic diagram of a zinc oxide p-n junction within thescope of the present invention.

FIG. 10 shows a spectrum of light emitted from a zinc oxide p-n junctionwithin the scope of the present invention.

FIG. 11 shows a graph of current vs. voltage for a zinc oxide p-njunction within the scope of the present invention showing rectificationof the p-n junction.

FIG. 12 is a schematic diagram of a group II-VI semiconductorheterostructure device containing an active region.

FIG. 13 is a schematic diagram of a group II-VI semiconductor device ofFIG. 10 without an active region.

FIG. 14A is a schematic diagram of a conventional GaN solid state devicefabricated on a sapphire or SiC substrate.

FIG. 14B is a schematic diagram of a ZnO solid state device fabricatedon an alternative self-supporting substrate within the scope of thepresent invention.

FIGS. 15A-15B are schematic representations of group II-VI semiconductordevices fabricated with multiple quantum wells.

FIGS. 16A-16B are schematic representations of group II-VI semiconductordevices fabricated with a single quantum well.

FIG. 17 is a zinc-oxygen-arsenic ternary diagram.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is drawn to methods for group II-VI semiconductordevices. These devices are preferably fabricated using group II-VIsemiconductor materials. In particular, the present invention is drawnto methods that are commercially viable such that the semiconductormaterials can be fabricated economically and efficiently. Some chemicalfabrication processes, such as molecular beam epitaxy and laser ablationepitaxy, require complicated and expensive equipment to produce smallcompound samples. Such processes, while useful for research purposes,are not commercially viable.

In accordance with one aspect within the scope of the present invention,p-type group II-VI semiconductor devices may be fabricated usingcommercially viable processes in which the partial pressures of thesemiconductor constituents are controlled.

In one method within the scope of the present invention, a p-type groupII-VI semiconductor material is fabricated by obtaining a selfsupporting substrate surface and depositing a thin film of group II-VIsemiconductor doped with one or more p-type dopants on the substratesurface. The deposition conditions are controlled such that the groupII, group VI, and p-type dopant atoms are in a gaseous phase prior tocombining as the thin film of group II-VI semiconductor.

The resulting thin film of group II-VI semiconductor is a persistentp-type semiconductor. As used herein a persistent p-type semiconductoris not substantially degraded by UV or visible light exposure, exists atsubstantially room temperature and pressure, and retains its p-typesemiconductor characteristic for an extended period of time, greaterthan one year. Depending upon the choice of group II-VI elements, thesemiconductor material may also exhibit high temperature stability andradiation resistance. This is particularly relevant to zinc oxidesemiconductors.

The p-type dopant may be selected from known p-type dopant materials.Typical p-type dopants include, but are not limited to, nitrogen,phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of theforegoing, and mixtures thereof.

The band gap of the group II-VI semiconductor may be controlled byincluding additional dopant or alloy compounds including, but notlimited to, cadmium oxide and magnesium oxide, which are themselvesgroup II-VI compounds. As an example, zinc oxide host has a band gap ofabout 3.2 eV. The zinc oxide band gap may be modified using known bandgap engineering techniques. By varying the host material, the lightemission wavelength may be adjusted. Zinc oxide alloyed with magnesiumoxide may increase the band gap to about 4.0 eV which will result in alight emission of about 310 nm. Similarly, cadmium oxide alloyed withzinc oxide, alone or in combination with other cadmium chalcogenides,may decrease the band gap which will result in a light emission in thevisible region up to about 660 nm. The amount of magnesium oxide orcadmium oxide will typically range up to about 20 mole % to achieve adesired band gap or other electronic properties.

The p-type dopant concentration in the group II-VI semiconductor ispreferably greater than about 10¹⁶ atoms·cm⁻³, and typically in therange from about 10¹⁶ to about 10²² atoms·cm⁻³. More preferably, thep-type dopant concentration is in the range from about 10¹⁷ to 10¹⁹atoms·cm⁻³. The dopant content in the resulting group II-VI material maybe varied and controlled. High dopant content is possible usingtechniques within the scope of the present invention.

The semiconductor resistivity is preferably less than about 0.5 ohm·cm.More preferably the resistivity is less than about 0.1 ohm·cm, morepreferably the resistivity is less than about 0.01 ohm·cm, and morepreferably the resistivity is less than about 0.001 ohm·cm.

The carrier mobility is preferably greater than about 0.1 cm²/V·s. Morepreferably, the carrier mobility is greater than 0.5 cm²/V·s, and morepreferably the carrier mobility is greater than 4 cm²/V·s. Carriermobilities greater than 100 cm²/V·s have been observed.

The group II-VI semiconductor may be deposited as a thin film on selfsupporting substrates known in the art such as sapphire and siliconcarbide. However, the semiconductor materials need not be deposited onexpensive crystal growth substrates. Instead, they may advantageously bedeposited on lower cost crystalline, polycrystalline, and amorphoussubstrates. Such substrates may include, but are not limited to, siliconwafers, amorphous self supporting substrate surfaces like fused silicaand glasses such as borosilicate glass and soda lime glass, andpolycrystalline substrate surfaces such as alumina. The group II-VIsemiconductor materials may be deposited on many other substrates. Thechoice of substrate may be affected by the desired application of thesemiconductor, including transparency, electronic properties, and cost.

The group II-VI semiconductor material is preferably deposited as asingle crystal. As used herein, a single crystal group II-VIsemiconductor material possesses a single predominant reflection on anX-ray diffraction pattern. Polycrystalline materials will possessmultiple reflection peaks on an X-ray diffraction pattern. Personsskilled in the art will appreciate that a perfect single crystal, defectfree, does not exist. There will always be some minor crystal defectspresent. As used herein, a single predominant reflection peak willpossess at least 95% of the integrated area of the X-ray diffractionpattern, and more preferably greater than 99%.

Zinc oxide doped with arsenic is one presently preferred group II-VIsemiconductor. Several possible fabrication methods may be used toprepare p-type zinc oxide doped with arsenic. For example, in onefabrication method within the scope of the present invention, a thinfilm of zinc arsenide (Zn₃As₂, ZnAs₂, or a mixture thereof) is depositedonto a self supporting substrate, such as fused silica or silicon wafer.The zinc arsenide may be deposited by thermal evaporation, sputtering, acombination of thermal evaporation and sputtering, or other knowndeposition techniques such as MOCVD, CVD, spin coating, etc.

Zinc oxide doped with arsenic may be sputtered onto the substrate at atemperature at which a portion of the arsenic is in the gas phase.Without being bound by theory, it is presently believed that a portionof the arsenic from the zinc arsenide layer evaporates by heating thesubstrate during the sputtering process such that the sputteringatmosphere contains identifiable partial pressures of arsenic, zinc, andoxygen. The partial pressures may be determined by a mass spectrometer.These gaseous species are present at appropriate ratios such that whenthey are forced onto the substrate by action of the magnetic field, theyform the desired arsenic doped zinc oxide. The partial pressures of thegroup II-VI semiconductor compounds is preferably controlled during thefabrication process.

Some useful results have been obtained when the thin film of zinc oxidewas sputtered in a sputtering atmosphere comprising hydrogen gas.Without being bound by theory, it is possible the hydrogen in thesputtering atmosphere helps limit the oxygen available to oxidize thezinc and arsenic and form undesired oxides. From a review of the Zn—O—Asternary diagram shown in FIG. 17, too much oxygen present may encouragethe formation of undesirable ternary compounds, such as Zn₄O₉As₂,Zn₃O₈As₂, Zn₃O₆As₂, and ZnO₄As₂. Hence, it is desirable to limit theoxygen partial pressure during the deposition process. Because hydrogenis known to act as an n-type dopant, it is possible that some hydrogenis incorporated into the semiconductor material and may counteract theactivity of the p-type dopant. Therefore, other means for controllingthe oxygen content in the sputtering atmosphere may be used.

Effective p-type zinc oxide may be prepared in a manner similar to themethod described above, except that it is not necessary to first deposita zinc arsenide layer onto the substrate. The zinc oxide may be directlysputtered onto the substrate under conditions in which gaseous arsenicis available. This may be accomplished through the use of a heatedbasket containing arsenic, zinc arsenide, or an arsenic compound. It mayalso be accomplished through the use of gaseous arsenic compounds, suchas arsenic ethoxide (As(OC₂H₅)₃).

In the RF magnetron sputtering process, a substrate is placed in alow-pressure chamber. The magnetron sputtering head is driven by an RFpower source which generates a plasma and ionization of the gas or gases(e.g., argon and selected dopants). For RF sputtering, a high-frequencygenerator is used generating electromagnetic power in the MHz-Region(typically about 13.56 MHz). Argon ions bombard the target releasingions from the target which are liberated and accelerated towards thesubstrate. Additional atoms in the plasma may also be deposited onto thesubstrate.

The sputtering process conditions may vary. For example, sputteringsystem may have a target comprising from about 0.99 to about 0.95 mole %zinc oxide and about 0.01 to about 0.05 mole % arsenic. Alternatively,the sputtering system may have a target comprising from about 0.99 toabout 0.95 mole % zinc and about 0.01 to about 0.05 mole % arsenic oxide(As₂O₃). Similarly, the sputtering system may have a target comprisingzinc metal and arsenic metal or a target comprising zinc oxide andarsenic oxide or a target comprising zinc metal or zinc oxide and asource of gaseous arsenic. Other similar variations in the sputteringprocess conditions are within the level of skill in the art.

The system may operate at a power in the range from about 20 to about120 watts. Persons skilled in the art will appreciate that the power maybe varied to control deposition time and film thickness, as well as thequality of the resulting film.

Good results have been obtained when the inert sputtering gas is presentin the sputtering atmosphere at a pressure in the range from about 4 to20 mtorr. The inert sputtering gas is preferably selected from argon,krypton, xenon, neon, and helium. Argon is a presently preferred inertsputtering gas. Small amounts of oxygen may be included in thesputtering gas, usually at a pressure in the range from about 1 to 4mtorr. In some embodiments, beneficial results have been obtained whenthe thin film is annealed at a temperature in the range from about 300to about 450° C. for a time period in the range from about 1 to about 15minutes.

It will be appreciated that alternative p-type dopants may be used inthe foregoing methods. For example, antimony has been used to preparep-type zinc oxide by using antimony or antimony oxide (Sb₂O₃) instead ofarsenic or arsenic oxide in several of the foregoing sputtering methods.Similarly, the methods may be adapted for use with other group IIelements besides zinc, such as cadmium and alkaline earth metals.Likewise, the methods may be adapted for use with other group VIelements besides oxygen, such as sulfur, selenium, tellurium, andmixtures thereof.

There are many potential applications and uses of the p-type group II-VIsemiconductor materials, and in particular zinc oxide and zinc sulfidesemiconductor materials. For example, it may be combined with a suitablen-type semiconductor material to form a p-n junction used in variouselectrical components. The n-type semiconductor is preferably compatiblewith the p-type group II-VI semiconductor and preferably contains ann-type dopant selected from known dopant materials. Typical n-typedopants include, but are not limited to, ions of Al, Ga, B, H, Yb andother rare earth elements, Y, Sc, and mixtures thereof. It may be usedto prepare light emitting devices that produce light ranging from theultraviolet to the red region under an electric potential. Band gapengineering principles can be used to control the light emitted.Ultraviolet light can be used to photopump phosphors and produce visiblewhite light. The low activation energy would permit the light emittingdevices to operate at low voltage. The p-type group II-VI semiconductormaterials may be used to prepare ultraviolet laser diodes. Just as thethin film may be configured to generate light under an electricpotential, the devices may be used as a photovoltaic solar cell togenerate electricity when exposed to light or a photodetector device.

The electrical conductivity of the thin films renders them useful inflat-panel display devices. The zinc oxide thin films may be used inelectrochromic devices, such as automatically dimming rear-view mirrorsfor automobiles and electrically controlled “smart” windows. Electriccurrent may be passed through the thin films coated on vehicle windowsand freezer display cases to render them frost-free. The thin filmconductivity may be exploited to dissipate static electricity fromwindows on photocopy machines, to form transparent electromagneticshields, invisible security circuits on windows, and transparent radioantennas built into automobile windows. The high thermal and chemicalstability of zinc oxide may render radiation hardened electricalcomponents.

While some of the discussion herein mentions zinc oxide specifically, itwill be appreciated that the processes, compositions, and applicationsthereof, have broad application to group II-VI semiconductor devices andare not limited solely to zinc oxide based semiconductor devices.

EXAMPLES

The following examples are given to illustrate various embodimentswithin the scope of the present invention. These are given by way ofexample only, and it is to be understood that the following examples arenot comprehensive or exhaustive of the many embodiments within the scopeof the present invention.

Many of the following Examples involve sputtering. FIG. 1 illustrates aschematic representation of a sputtering system 10 used in some of thefollowing examples. In RF sputtering, a substrate 12 is placed in alow-pressure chamber 14. The magnetron sputtering head 16 is driven byan RF power source (not shown) which generates a plasma and ionizationof the sputtering gas or gases between the electrodes. The sputteringgas typically includes an inert sputtering gas, which may include, butis not limited to, argon, krypton, xenon, neon, and helium. Thesputtering gas may optionally include one or more selected dopants. Aplurality of gas sources 18, 20, 22, and 24 may provide N₂, H₂, Ar, O₂,or other desired gases. For RF sputtering, a high-frequency generator isused generating electromagnetic power in the MHz-Region. Argon ionsbombard the target 26, releasing ions from the target which areaccelerated towards the substrate. Additional atoms in the plasma mayalso be deposited onto the substrate, such as dopant atoms.

In the sputtering system of FIG. 1, the substrate 12 is secured in placeby a heated substrate fixture 28. The temperature of the heatedsubstrate fixture 28 was measured and reported as the substratetemperature. The sputtering chamber 14 is constantly evacuated with avacuum pump system 30. The sputtering atmosphere includes an inertsputtering gas mentioned above, and may optionally include other gaseswhich are provided by the respective gas source 18, 20, 22, and 24. Thegas pressures reported below, such as 10 mtorr, represent the gaspressure of the respective gas as it is introduced into the sputteringchamber 14. In some embodiments, volatile materials 32, such as arsenicfor example, are evaporated in a heated basket, illustrated as theheated evaporator 34. The system includes online pressure measurement36. It also includes thickness measurement capability 38. The systemoptionally includes an online mass spectrometer 40 which may measure thegas content and accurately determine the partial pressure of thesputtering atmosphere.

Unless specifically noted, the following are common conditions for thesputtering described in the Examples:

1. The distance between the sputtering target and the depositionsubstrate was about 1.5 inches.

2. Radio Frequency was 13.56 MHz. It will be appreciated by thoseskilled in the art that much lower and much higher frequencies may beused in RF sputtering systems. However, for practical considerations andFCC regulations, the radio frequency used was 13.56 MHz.

3. The atmosphere was maintained by using a continuous vacuum, andpressures were controlled by addition of indicated gases. Some residualatmospheric oxygen or moisture adsorbs on the metal surfaces within thesputtering chamber. Therefore, oxygen out-gases during the sputteringprocess at the operating temperature and pressure.

4. The sputtering time was typically about 10 minutes, but some sampleswere sputtered for longer time periods, such as an hour, and somesamples were sputtered for shorter periods, such as one minute. Thesputtering time was selected to produce a film thickness of about onemicron. It will be appreciated that several factors affect the filmthickness, including, but not limited to, sputtering time, power,temperature, concentration of dopants, and evaporation of constituentsof the sputtered thin film.

5. One inch RF magnetron sputtering head was used with water cooling.

6. All samples were tested for semiconductor type by Seebeck and Hallmeasurement.

7. All chemicals were high purity from Alfa Aesar.

8. In most cases, the operating condition ranges and experimental resultranges are drawn from multiple experiments. Thus, the reported examplesand results may represent a composite of several actual experiments.

Example 1 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+As (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.98 moles)+As (0.02 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr and O₂ at a gas pressure of about 1to 4 mtorr. The preferred sputtering atmosphere pressures were about 9mtorr argon and about 1 mtorr O₂.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 10,000 ohms/square. After annealing at 440° C. in air, theresistance dropped to about 1,000 ohms/square. In another compositionprepared in accordance with the procedure of this Example, thetransparent p-type zinc oxide layer had a resistance ranging from200,000 ohms/square to 10,000,000 ohms/square. This composition was notsubsequently annealed.

Example 2 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+As (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.98 moles)+As (0.02 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr and H₂ at a gas pressure of about 1to 4 mtorr. The preferred sputtering atmosphere pressures were about 9mtorr argon and about 1 mtorr H₂.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 500 ohms/square. Without being bound by theory, it is believedthat the hydrogen gas may be moderating the concentration of oxygen inthe sputtering atmosphere.

Example 3 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+As (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.975 moles)+As (0.025 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 to 90 watts. The sputtering atmosphere included argonat a gas pressure of about 4 to 20 mtorr. The preferred sputteringatmosphere pressure was about 9 mtorr argon.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 1000 ohms/square. The resulting p-type zinc oxide was analyzed byX-ray Photoelectron Spectroscopy (XPS). A graph of the XPS data is shownin FIG. 2. The data from FIG. 2 show arsenic in zinc oxide with aconcentration of about 0.25 mole percent.

Example 4 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. A First Composition Layercomprising zinc and arsenic was deposited onto the self supportingsubstrate.

In one example, the First Composition Layer was deposited by thermalevaporation of zinc arsenide (Zn₃As₂ or ZnAs₂) for a period of about2-60 seconds, with a preferred period of about 14 seconds. The substratetemperature was about 360° C. Thermal evaporation is a well knowntechnique for depositing thin films, particularly metal and metalalloys. Subsequent analysis of the First Composition Layer indicatedthat it contained zinc and arsenic in approximately equal atomicamounts. This suggests that the stoichiometry of the zinc arsenide hadchanged during thermal evaporation or that it contained a mixture ofzinc arsenide molecules.

The following sequential basic steps take place: (i) a vapor isgenerated by boiling or subliming a source material, (ii) the vapor istransported from the source to the substrate, and (iii) the vapor iscondensed to a solid film on the substrate surface. In the evaporativedeposition process, a substrate is placed in a low-pressure chamber. Atungsten crucible is disposed below the substrate. The desired sourcematerial or mixture of source materials is placed in the crucible andheated to a temperature sufficiently high to evaporate the sourcematerial. The source material vapor condenses on the substrate, whichmay or may not be heated. Heating the substrate may enhance the bondbetween the deposited source material film and the substrate. Theevaporative deposition process may be completed in less than a minute,and usually a few seconds.

In another example, the First Composition Layer was deposited by RFsputtering. In yet another example, the First Composition Layer wasdeposited by the combination of thermal evaporation and RF sputtering.It will be appreciated that the First Composition Layer may be depositedusing other known, conventional, or novel deposition techniques,including, but not limited to, RF sputtering and evaporative depositiontechniques described above, as well as chemical vapor deposition (CVD),metal organic chemical vapor deposition (MOCVD), other evaporation andsputtering techniques, and combinations of these and other thin filmdeposition technologies.

Preparing a thin film by evaporation alone is a very quick process thatis completed in a matter of seconds, but it is difficult to properlycontrol the resulting thin film. In contrast, sputtering alone is a slowprocess that requires many minutes to complete. The combination ofsputtering and thermal evaporation includes heat to facilitateevaporation of the source material and a RF field to induce sputtering.Alternatively, the RF field can be used to heat the source materialdisposed close to the RF magnetron head sufficiently to evaporate thesource material for deposition by thermal evaporation. In this case, asmall amount of sputtering will also occur. The resulting thin film isof good quality and quickly prepared. In this case, the combination ofsputtering and evaporation was used to deposit Zn₃As₂ onto a fusedsilica substrate at 350° C. for about 50 seconds.

A Second Composition Layer comprising zinc oxide was deposited onto theFirst Composition Layer by RF sputtering. The sputtering targetcomposition was ZnO. The substrate temperature was between 400 and 550°C. The preferred temperature was about 450° C. The RF power was between20 and 120 watts. The preferred power was about 100 watts. Thesputtering time was between 10 and 40 minutes, and preferably about 20minutes. The sputtering atmosphere included argon at a gas pressure ofabout 4 to 20 mtorr. The preferred sputtering atmosphere pressure wasabout 10 mtorr argon.

The resulting p-type zinc oxide layer had a resistance of about 2,000 to50,000 ohms/square and a resistivity of about 1.4 ohm·cm. The variableresistance may be attributed to variable thickness of the p-type zincoxide layer. The concentration of arsenic was about 1.74×10¹⁸ per cm³and was measured by the Hall effect technique. Without being bound bytheory, it is believed that a quantity of arsenic may be evaporatedduring the sputtering step and become part of the sputtering plasma suchthat ZnO doped with arsenic was deposited onto substrate.

The photoluminescence of arsenic doped p-type zinc oxide was measuredand compared against undoped, bulk, n-type zinc oxide and phosphorusdoped p-type zinc oxide. This comparison is shown in FIG. 3. Thedistinctly different photoluminescence between n-type and p-type zincoxide is apparent. Moreover, the arsenic doped zinc oxide showsphotoluminescence consistent with the phosphorus doped zinc oxide. Anoticeable luminescent peak at about 3.3568 eV was observed with bothphosphorus doped and arsenic doped p-type zinc oxide compositions.

The resistance and mobility of the p-type zinc oxide were measured andare shown graphically in FIG. 4. The slope of the mobility curveprovides an indication of how deep the centers are located. A sample ofthe arsenic doped p-type zinc oxide film was analyzed by Secondary IonMass Spectroscopy (SIMS) and measured against a calibrated standard. Theresults, shown graphically in FIG. 5, indicate stable and consistentarsenic doping at a concentration of about 10²⁰ atoms/cm³ to a depth ofabout 60 nm. Based upon the SIMS data, the composition of the arsenicdoped p-type zinc oxide is labeled on the Zn—O-As ternary diagram ofFIG. 17. Another p-type zinc oxide sample prepared according to theprocedure of this Example. It had a composition ofZn_(0.41)O_(0.59)As_(9.43×10) ⁻⁴ . It had an arsenic content of about4.3×10¹⁹ arsenic atoms/cm³ to a depth of about 450 nm.

A region of the arsenic doped p-type zinc oxide that was sputtereddirectly onto a fused silica substrate was analyzed by X-raydiffraction. A graph of the X-ray diffraction pattern is shown in FIG. 7illustrating a single dominant peak representing the (002) plane. Thisindicates that single crystal p-type zinc oxide was deposited directlyonto the amorphous fused silica substrate. By way of comparison, anX-ray diffraction pattern of polycrystalline zinc oxide is shown in FIG.6.

Example 5 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas Zn (0.99-0.95 moles)+As₂O₃ (0.01-0.05 moles). The preferred targetcomposition was about Zn (0.99 moles)+As₂O₃ (0.01 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 15 and 40 watts. The preferredpower was about 30 watts. A lower power was used in this example to keepthe powdered zinc metal in the target from being quickly vaporized anddispersed during the sputtering processing. The sputtering atmosphereincluded argon at a gas pressure of about 4 to 20 mtorr and O₂ at a gaspressure of about 1 to 4 mtorr. The preferred sputtering atmospherepressures were about 10 mtorr argon and about 1 mtorr O₂.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 100,000 ohms/square.

Example 6 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+As₂O₃ (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.99 moles)+As₂O₃ (0.01 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr. The preferred sputtering atmospherepressure was about 10 mtorr argon.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 100,000 ohms/square.

Example 7 Sputtering of ZnO with Antimony as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas Zn (0.99-0.95 moles)+Sb (0.01-0.05 moles). The preferred targetcomposition was Zn (0.98 moles)+Sb (0.02 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 90 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr. The preferred sputtering atmospherepressure was about 10 mtorr argon.

The resulting transparent p-type zinc oxide layer had a resistance ofabout 600,000 ohms/square. Without being bound by theory, it is believedthat the oxygen needed to form the zinc oxide crystal lattice wasobtained from residual oxygen in the sputtering system atmosphere.

The target composition is not limited to metallic zinc and antimony. Thetarget may comprise zinc oxide and antimony metal, zinc metal andantimony oxide, and zinc oxide and antimony oxide. The sputteringatmosphere may optionally include either hydrogen gas or oxygen gas at agas pressure of about 0.1 to 4 mtorr in addition to the inert sputteringgas.

Example 8 Sputtering of ZnO with Antimony as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+Sb (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.98 moles)+Sb (0.02 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 90 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr. The preferred sputtering atmospherepressure was about 10 mtorr argon.

The resulting transparent p-type zinc oxide layer had a sheetresistivity of about 6.8×10⁻⁵ ohm·cm and a mobility of about 169cm²/V·sec. The concentration of antimony was about 1.3×10²¹ atoms percm³ measured by the Hall effect technique. A sample of the antimonydoped p-type zinc oxide film was analyzed by Secondary Ion MassSpectroscopy (SIMS) and measured against an antimony doped silicastandard. The results were valid within a factor of 2. The results,shown graphically in FIG. 8, indicate stable and consistent arsenicdoping at a concentration of about 10²⁰ atoms/cm³ to a depth of about270 nm. The antimony concentration increased to about 10²¹ close to thefused silica substrate. Portions of the sample were visuallytransparent. Another sample of the antimony doped p-type zinc oxidelayer prepared in the same manner had a sheet resistivity of about9.4×10⁻⁵ ohm·cm and a mobility of about 108 cm²/V·sec. The concentrationof antimony was about 6.34×10²⁰ atoms per cm³ measured by the Halleffect technique.

Example 9 Sputtering of ZnO with Antimony as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. The sputtering target compositionwas ZnO (0.99-0.95 moles)+Sb (0.01-0.05 moles). The preferred targetcomposition was ZnO (0.98 moles)+Sb (0.02 moles). The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 90 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr and oxygen gas at a pressure ofabout 1 mtorr. The preferred sputtering atmosphere pressure was about 10mtorr argon and 1 mtorr oxygen.

The resulting transparent p-type zinc oxide layer had bettercrystallinity and mobility compared to the other antimony-doped zincoxide thin films prepared above.

Example 10 Sputtering of ZnO with Copper as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. A First Composition Layercomprising copper was deposited onto the self supporting substrate by RFsputtering for a period of from 5 to 40 minutes, with a preferred periodof about 10 minutes at room temperature.

A Second Composition Layer comprising zinc oxide was deposited onto theFirst Composition Layer by RF sputtering. The sputtering targetcomposition was ZnO. The substrate temperature was between 400 and 550°C. The preferred temperature was about 450° C. The RF power was between20 and 120 watts. The preferred power was about 100 watts. Thesputtering time was between 10 and 40 minutes, and preferably about 20minutes. The sputtering atmosphere included argon at a gas pressure ofabout 4 to 20 mtorr. The preferred sputtering atmosphere pressure wasabout 10 mtorr argon.

At low concentration, copper may counteract the natural n-type propertyof ZnO resulting in a neutral or p-type semiconductor with lowresistance. Without being bound by theory, it is believed that aquantity of copper may be evaporated during the sputtering step andbecome part of the sputtering plasma such that ZnO doped with copper wasdeposited onto substrate.

Example 11 Sputtering of ZnO with Arsenic as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Both fused silica and silicon wafers wereused as the self supporting substrate. A First Composition Layercomprising zinc and arsenic was deposited onto the self supportingsubstrate. The First Composition Layer included Zn₃As₂, ZnAs₂, or amixture thereof. In one example, the zinc/arsenic layer was deposited bythermal evaporation for a period of about 2-60 seconds, with a preferredperiod of about 14 seconds. The temperature was about 360° C. The FirstComposition Layer may also be deposited by RF sputtering.

A Second Composition Layer comprising zinc oxide was deposited onto theFirst Composition Layer by RF sputtering. The sputtering targetcomposition was ZnO. The substrate temperature was between 400 and 550°C. The preferred temperature was about 450° C. The RF power was between20 and 120 watts. The preferred power was about 100 watts. Thesputtering time was between 10 and 40 minutes, and preferably about 20minutes. The sputtering atmosphere included argon at a gas pressure ofabout 4 to 20 mtorr and hydrogen at a gas pressure of about 0.1 to 4mtorr. The preferred sputtering atmosphere pressure was about 10 mtorrargon.

The resulting p-type zinc oxide layer had a resistance of about 10 to200 ohms/square.

Example 12 Sputtering of ZnO with Antimony as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering in accordance with the procedure of Example11, except that the First Composition Layer comprised zinc and antimony.The resulting p-type zinc oxide layer showed high mobility.

Example 13 Sputtering of ZnO with Antimony as a Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering in accordance with the procedure of Example12, except that the First Composition Layer comprised antimony. Theantimony was deposited onto the self supporting substrate by thermalevaporation. The resulting p-type zinc oxide layer showed high mobility.

Example 14 Sputtering of ZnO with Arsenic as Dopant

A thin film of p-type zinc oxide was deposited onto a self supportingsubstrate by RF sputtering. Fused silica was used as the self supportingsubstrate. The sputtering target composition was ZnO. The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 watts. The sputtering atmosphere included argon at agas pressure of about 4 to 20 mtorr. In addition, a basket containingarsenic was heated to a controlled temperature sufficient to evaporatethe arsenic. The basket was positioned such that the arsenic wasevaporated directly onto the fused silica at the same time the zincoxide was sputtered onto the fused silica.

The resulting transparent p-type zinc oxide layer displayed visiblediffraction rings, but was very clear and transparent. It will beappreciated that this process may be adapted for use with other p-typedopants besides arsenic.

Based upon arsenic vapor pressure data, As₄ has a higher vapor pressureat a given temperature when compared to As₃, As₂, and As. Therefore, itis presently believed that As₄ is the dominant volatile arsenic speciesat typical operating conditions. Without being bound by theory, it isbelieved As₄ must be broken into individual arsenic atoms to beincorporated into the zinc oxide. An apparent threshold RF power ofabout 60 watts has been observed for the given experimental sputteringsystem used herein. It will be appreciated that this threshold RF powermay vary depending upon the sputtering system used. Likewise, it will beappreciated that other means besides a RF field may be used to break theAs₄ molecular bonds.

A similar phenomenon has been observed with respect to antimony vaporpressures as with arsenic discussed above. Antimony generally requires ahigher temperature to achieve the same vapor pressure as arsenic.Likewise, an apparent threshold RF power of about 90 watts has beenobserved for the given experimental sputtering system used herein.

Example 15 Sputtering of ZnS with Arsenic as Dopant

A thin film of p-type zinc sulfide was deposited onto a self supportingsubstrate by RF sputtering. Fused silica was used as the self supportingsubstrate. The sputtering target composition was ZnS. The substratetemperature was between 350 and 550° C. The preferred temperature wasabout 400° C. The RF power was between 20 and 120 watts. The preferredpower was about 60 watts. The sputtering time was about 1 to 2 minutes.The sputtering atmosphere included argon at a gas pressure of about 4 to20 mtorr. In addition, a basket containing arsenic was heated to acontrolled temperature sufficient to evaporate the arsenic. The basketwas positioned such that the arsenic was evaporated directly onto thefused silica at the same time the zinc sulfide was sputtered onto thefused silica. It will be appreciated that this process may be adaptedfor use with other p-type dopants besides arsenic.

Example 16 Conversion of ZnS to ZnO with Arsenic as a Dopant

A thin film of p-type zinc sulfide was prepared in accordance withExample 15. The p-type ZnS was used as a precursor for preparing p-typeZnO. The ZnS thin film was placed in furnace containing oxygen toconvert the ZnS into ZnO. The furnace temperature, atmosphere, andannealing time may be varied to control the extent of ZnS conversion.For instance, a p-type zinc oxysulfide semiconductor may be prepared bylimiting the amount of oxygen in the atmosphere and preventing completeoxidation of the ZnS. In addition, the vapor pressure of the zinc,oxygen, and arsenic may be controlled to tailor the resulting dopantconcentration in the semiconductor material. It will be appreciated thatthis process may be adapted for use with other p-type dopants besidesarsenic.

Example 17 Evaporative Deposition of ZnO with Arsenic as a Dopant

A stable, p-type zinc oxide semiconductor material was prepared. Zincmetal, doped with 2 mole % arsenic, was deposited onto a fused silicasubstrate by thermal evaporation in an oxygen-rich atmosphere containing20 mtorr argon and 10 mtorr oxygen at a temperature of about 430° C.During the deposition process, the zinc and/or arsenic was partiallyoxidized. The resulting As-doped ZnO thin film exhibited p-typecharacteristics. It had a Seebeck voltage of about positive 6 mV D.C.Increasing the oxygen pressure may result in a more complete formationof ZnO. While no further heating or annealing was performed in thisexample, additional heating or annealing may be desirable to control thelevel of zinc oxidation and/or optimize the electronic properties of thep-type semiconductor material.

Example 18 Deposition of Zinc Oxide with Arsenic as Dopant

A stable, p-type zinc oxide semiconductor material is prepared. Zincarsenide is deposited onto a self-supporting substrate surface. Thesurface may be fused silica, silicon wafer, borosilicate glass, orsimilar self supporting substrate. The zinc arsenide may be Zn₃As₂,ZnAs₂, or a mixture thereof. In one example, the zinc arsenide layer isdeposited by thermal evaporation for a period of about 2-60 seconds,with a preferred period of about 14 seconds. In another embodiment, thezinc arsenide layer may is deposited by sputtering. In yet anotherembodiment, the zinc arsenide layer is deposited by CVD or MOCVD.

The zinc arsenide layer is thermally annealed in an atmospherecontaining oxygen for sufficient time period to oxidize the zincarsenide layer and form zinc oxide doped with arsenic. At a givenannealing temperature, some quantity of arsenic and zinc may evaporatefrom the zinc arsenide. Such evaporation may be taken into considerationin determining the starting composition of the zinc arsenide. Similarly,under these annealing conditions, it may be desirable to introduceadditional amounts of gaseous arsenic, zinc, or oxygen to inhibitevaporation of these elements from the zinc oxide film and to influencethe final composition of the semiconductor material.

Example 19 Spin Coating of Arsenic-Doped ZnO

A stable, p-type zinc oxide semiconductor material may be prepared byspin coating using arsenic as the dopant. Fused silica is used as theself supporting substrate. Zinc 2-4 pentanedionate is used as the zincsource and arsenic III ethoxide is used as the arsenic source. Thesecompounds are dissolved in butanol which serves as a common solvent.This solution is spun onto a fused silica slide.

After a layer is spun on the substrate, it is heated to about 600° C.for about 10 minutes for pyrolysis of the organics. This procedure isrepeated 5 or 6 times to get the desired film thickness. The substrateis annealed at about 700° C. for 1 to 5 hours in a nitrogen atmosphere.Control of the partial pressures of all inorganic components isdesirable for the desired doped zinc oxide composition, otherwiseevaporation or one or more ingredients or formation of undesiredcompounds may occur. The oxygen can come from the atmosphere or can comefrom being part of the organic precursors.

Example 20 Spin Coating of Antimony-Doped ZnO

A stable, p-type zinc oxide semiconductor material may be prepared byspin coating in accordance with the method of Example 19, except thatantimony is used as the dopant instead of arsenic. Antimony chloride(SbCl₃) is used as the antimony source.

Example 21 Spin Coating of P-Type ZnS

A stable, p-type zinc sulfide semiconductor material may be prepared byspin coating in accordance with the spin coating methods describedabove, except that a sulfur-containing organic compound is used incombination with the zinc compound and the selected p-type dopantcompound. Sulfur can be engineered into organic compounds compatiblewith the spin coating. An example of a possible organic sulfur compoundthat may be used in the spin coating is 8-(p-sulfophenyl) theophylline,which is soluble in methanol and ethanol. In such cases, one may controlthe oxygen and sulfur partial pressures to obtain the desired p-typeZnS. For example, if oxygen is present, then a zinc oxysulfide compoundmay be prepared. The partial pressures of any component in theatmosphere can be determined experimentally or they can be calculatedfrom thermodynamic data.

Example 22 MOCVD of P-Type ZnO

A stable, p-type zinc oxide semiconductor material may be prepared bymetal organic chemical vapor deposition (MOCVD) using arsenic, antimony,or other p-type dopant. A typical MOCVD process is described above.

Example 23 MOCVD of Zinc Sulfide

A stable, p-type zinc sulfide semiconductor material may be prepared byMOCVD in accordance with the method of Example 22, except that asulfur-containing organic compound is used in combination with the zinccompound and the selected p-type dopant compound. Sulfur can beengineered into organic compounds compatible with the MOCVD. In suchcases, it is important to control the oxygen and sulfur partialpressures to obtain the desired p-type ZnS material. For example, ifoxygen is present, then a zinc oxysulfide compound may be prepared.

Example 24 Bulk Preparation of Copper-Doped ZnO

A stable, p-type zinc oxide semiconductor material was prepared usingcopper as the dopant. The copper-doped zinc oxide p-type semiconductorwas prepared in bulk by mixing 90% (atomic percent) zinc oxide and 10%(atomic percent) copper oxide powder and heating the mixture in afurnace. A Seebeck measurement of the resulting bulk material was madeto confirm that the material was a p-type semiconductor. It had aSeebeck voltage in the range from about positive 40 mV D.C. to about 90mV D.C. The electrical resistance of the resulting material was about600 Kohms/square to 900 Kohms/square. This compound was not optimized.It is believed that smaller amounts of copper oxide may provide betterresults.

Example 25 Fabrication of Zinc Oxide P/N Junction

A zinc oxide p/n junction 50 was fabricated as shown schematically inFIG. 9. A thin film of p-type zinc oxide 52 was deposited onto a selfsupporting silicon wafer substrate by RF sputtering in accordance withExample 4. In Example 4, a thin film of Zn₃As₂ 56 was first depositedonto the silicon wafer 54 and the p-type zinc oxide 52 was sputtered ontop of the zinc arsenide 56. A thin film of n-type zinc oxide wassputtered on top of the p-type zinc oxide at about 300° C. Thesputtering target included ZnO (99.925 mole %) and Ga₂O₃ (0.075 mole %)that had been mixed, sintered, and annealed at about 1100° C. Thesputtering step occurred at a temperature of about 350° C. Thesputtering atmosphere included argon at a gas pressure of about 4 to 20mtorr. About 10% hydrogen gas may alternatively be included in thesputtering atmosphere to produce n-type ZnO.

A positive electrode 60 and a negative electrode 62 were attached to thep/n junction 50 as shown in FIG. 9. Current vs. voltage was measured andshown in the rectification graph of FIG. 11. A luminescent emission atroom temperature was briefly observed before the p/n junction failed.Failure occurred because the electrical resistance dropped too quicklyallowing excessive current to overpower the p/n junction. A graph of themeasured emission spectrum is shown in FIG. 10. Because of the shortduration of the light emission, it was not possible to obtain a detailedmeasurement of the spectrum.

Semiconductor heterostructures may be fabricated based upon p/n junctiondescribed above. These devices may be prepared by depositing multiplelayers of p-type and n-type group II-VI semiconductors. Suchheterostructures may be fabricated using matching or compatible groupII-VI crystals. Examples of two possible semiconductor heterostructuredevices are illustrated in FIGS. 12 and 13. It will be appreciated thatthe illustrated devices are given by way of example and not limitation.Persons skilled in the art will recognize that a numerous variations ofthese devices are possible.

The device shown in FIG. 12 includes a self supporting substrate 62. Thesubstrate may be a known crystalline substrate or it may be a low costsubstrate including, but not limited to, silicon wafers, polycrystallinealumina, and amorphous self supporting substrate surfaces like fusedsilica. A layer of n-type zinc oxide 64 doped with an n-type dopant,such as gallium, is deposited on the substrate 62. The n-type zinc oxidelayer 64 may be about 0.4 μm thick. The device may include additionaln-type zinc oxide layers 66, 68, comprising magnesium and cadmiumalloys. For example, layer 66 may have a composition ofMg_(0.15)Zn_(0.85)O doped with gallium, and it may have a thickness ofabout 0.15 μm. Layer 68 may have a composition of Cd_(0.06)Zn_(0.94)Odoped with gallium, and it may have a thickness of about 0.05 μm. Thethin cadmium zinc oxide alloy layer 68 is the active region whereinlight generation occurs. Deposited on top of the active region layer 68are one or more p-type zinc layers 70, 72. Layer 70 may have acomposition of Mg_(0.15)Zn_(0.85)O doped with arsenic, and it may have athickness of about 0.15 μm. Layer 72 may be p-type zinc oxide doped witha p-type dopant, such as arsenic.

It will be appreciated by persons having ordinary skill in the art thatactual composition of the n-type and p-type zinc oxide layers may vary.Similarly the concentration of magnesium and cadmium in the zinc oxidealloys may vary.

FIG. 13 illustrates a device substantially identical to the device ofFIG. 12, except that there is no separate active region.

Single or multiple quantum well (MQW) heterostructures may be fabricatedto render the p/n junction more efficient. A single quantum well is madeof two alternating semiconductor materials. One layer is a barrier layerdefined by a higher band gap than the second layer. The second layer'sband gap defines the bottom of the quantum well. For example, MgO may bealloyed with ZnO to form the barrier layer, and the undoped ZnO willdefine the bottom of the well. This produces a more efficient device andraises the band edge. Conversely, CdO may be alloyed with ZnO to definethe bottom layer of the quantum well, and the undoped ZnO defines thebarrier layer. This produces a more efficient device and lowers the bandedge.

An additional advantage of a quantum well is that the layers can bemechanically strained to raise or lower the band edge. Mechanical strainmay exist if the two layers have slightly different crystal latticeconstants. For most zinc oxide materials the band edge is around 390 nm,but some of the zinc oxide semiconductor materials fabricated inaccordance with the present invention had a band edge of about 370 nm.

The number of quantum wells may vary. Good results may be obtained withjust one quantum well. Typically the number of quantum wells may rangefrom about 1 to 10, and more preferably from about 3 to 7 quantum wells.The total thickness of the quantum well alternating layers must in thevicinity of, or less than, the electron de Broglie wavelength (100 Å).These heterostructures may be fabricated through a chemical depositionprocess, including but not limited to those described above, such assputtering, CVD, MOCVD, etc.

For example, one possible MQW configuration for use in connection withzinc oxide semiconductor structure may include alternating layers of ZnO(20 Å-100 Å) and Cd_(x)Zn_(1−x)O (10 Å-25 Å). The cadmium content may bevaried. The amount of cadmium in the cadmium zinc oxide alloy may varydepending on the desired shifting of the band gap. In one illustrativeembodiment, the cadmium content may range from about 1 to 20 mole %, andmore typically about 10 mole %. The cadmium zinc oxide alloy may bereplaced with a magnesium zinc oxide alloy of the general formulaMg_(x)Zn_(1−x)O.

FIG. 14A is a schematic representation of a typical state of the artGaN-based semiconductor device 80 containing MQWs 82. It will beappreciated that GaN devices are complicated to manufacture because ofthe expensive sapphire or SiC substrate 84 and multiple layers 86, 88required to match the crystal lattice of GaN and the substrate. Incontrast, FIG. 14B is a schematic representation of a zinc oxide basedsemiconductor device 90 containing MQWs 92. Because single crystal zincoxide 94 may be deposited directly on a low-cost substrate 96, such asfused silica or a silicon wafer, the zinc oxide based semiconductordevice fabricated within the scope of the present invention represents asubstantial improvement over conventional GaN-based semiconductordevices.

FIG. 15A is a schematic representation of one possible zinc oxide basedsemiconductor device 100 fabricated with MQWs. Three quantum wells areshown containing alternating layers of undoped ZnO 102 (20 Å-100 Å) andCd_(0.2)Zn_(0.8)O 104 (10 Å-25 Å). The cadmium content may be varied.The amount of cadmium in the cadmium zinc oxide alloy 104 may varydepending on the desired shifting of the band gap. The cadmium contentpreferably ranges from about 1 to 20 mole %, and more typically about 10mole %.

The semiconductor device 100 includes a layer of n-type zinc oxide 106,approximately 2 μm thick, doped with an n-type dopant, such as Ga or Al,deposited on a self supporting substrate 108. A layer of p-type zincoxide 110, approximately 2 μm thick, doped with a p-type dopant, such asarsenic, may be deposited on top of the MQWs, layers 102, 104. A layerof p-type zinc oxide 112, approximately 5 μm thick, doped with a p-typedopant, such as arsenic, may be deposited on top of layer 110.

FIG. 15B is a schematic representation of a zinc oxide basedsemiconductor device 120 similar to that of FIG. 15A except that thequantum wells include a magnesium zinc oxide alloy instead of a cadmiumzinc oxide alloy. The alternating layers of magnesium zinc oxide alloy124 may have the formula Mg_(0.1)Zn_(0.9)O (10 Å-25 Å). The magnesiumcontent may be varied. The amount of magnesium the magnesium zinc oxidealloy 124 may vary depending on the desired shifting of the band gap.The magnesium content preferably ranges from about 1 to 20 mole %, andmore typically about 10 mole %.

FIG. 16A is a schematic representation of one possible zinc oxide basedsemiconductor device fabricated with a single quantum well having acomposition substantially the same as the device shown in FIG. 15A. Asmentioned above, the number of quantum wells can vary, just as thecomposition of the quantum well layers and the p-type and n-typesemiconductor material used in the device.

FIG. 16B is a schematic representation of a zinc oxide basedsemiconductor device similar to that of FIG. 16A except that the quantumwell includes a magnesium zinc oxide alloy instead of a cadmium zincoxide alloy.

It will be appreciated that the present invention provides methods forfabricating group II-VI semiconductor devices. The fabrication methodsare commercially viable. The resulting semiconductor materials exhibitgood electronic and physical properties.

The present invention may be embodied in other specific forms withoutdeparting from its structures, methods, or other essentialcharacteristics as broadly described herein and claimed hereinafter. Thedescribed embodiments are to be considered in all respects only asillustrative, and not restrictive. The scope of the invention is,therefore, indicated by the appended claims, rather than by theforegoing description. All changes that come within the meaning andrange of equivalency of the claims are to be embraced within theirscope.

1. A solid state device comprising a p-n junction containing a p-typegroup II-VI semiconductor material and an n-type semiconductor material,wherein the p-type group II-VI semiconductor comprises a single crystalthin film of a group II-VI semiconductor comprising atoms of group IIelements and atoms of group VI elements, wherein the group II-VIsemiconductor is doped with one or more p-type dopants selected fromnitrogen, phosphorus, arsenic, antimony, bismuth, copper, andchalcogenides of the foregoing, and mixtures thereof, wherein the p-typedopant concentration in the group II-VI semiconductor is greater thanabout 10¹⁶ atoms·cm⁻³, wherein semiconductor resistivity is less thanabout 0.5 ohm·cm, and wherein the carrier mobility is greater than about0.1 cm²/V·s, and wherein the p-type group II-VI semiconductor materialhas a luminescent peak at 3.357 eV.
 2. A solid state device according toclaim 1, wherein the group II elements are selected from zinc, cadmium,alkaline earth metals, and mixtures thereof.
 3. A solid state deviceaccording to claim 1, wherein the group VI elements are selected fromoxygen, sulfur, selenium, tellurium, and mixtures thereof.
 4. A solidstate device according to claim 1, wherein the p-type dopant isphosphorus.
 5. A solid state device according to claim 1, wherein thep-type dopant is arsenic.
 6. A solid state device according to claim 1,wherein the p-type dopant is antimony.
 7. A solid state device accordingto claim 1, wherein the p-type dopant is bismuth.
 8. A solid statedevice according to claim 1, wherein the thin film of a group II-VIsemiconductor is deposited by a chemical deposition process selectedfrom RF sputtering, CVD (chemical vapor deposition), MOCVD (metalorganic chemical vapor deposition), spin coating, electrophoresis, andhydrothermal growth processes.
 9. A solid state device according toclaim 1, wherein the group II-VI semiconductor material is zinc oxide.10. A solid state device according to claim 1, wherein the group II-VIsemiconductor material is zinc sulfide.
 11. A solid state deviceaccording to claim 1, wherein the device is a light emitting diode. 12.A solid state device according to claim 1, wherein the device is a laserdiode.
 13. A solid state device according to claim 1, wherein the deviceis a field effect transistor.
 14. A solid state device according toclaim 1, wherein the device is a photodetector.
 15. A solid state deviceaccording to claim 1, wherein the device emits light at a wavelength inthe range from about 207 nm to 810 nm.
 16. A solid state deviceaccording to claim 1, wherein the device emits light at a wavelength ofabout 441.6 nm.
 17. A solid state device according to claim 1, whereinthe device emits light at a wavelength of about 325 nm.
 18. A solidstate device according to claim 1, wherein the group II-VI semiconductormaterial is disposed on an amorphous self supporting substrate surface.19. A solid state device according to claim 1, wherein the n-typesemiconductor material is an n-type group II-VI semiconductor.
 20. Asolid state device comprising a p-n junction containing a p-type zincoxide and an n-type semiconductor material, wherein the p-type zincoxide comprises single crystal zinc oxide that is doped with one or morep-type dopants, wherein the p-type dopant concentration in the zincoxide is greater than about 10¹⁶ atoms·cm⁻³, wherein semiconductorresistivity is less than about 0.5 ohm·cm, and wherein the carriermobility is greater than about 0.1 cm²/V·s, and wherein the p-type zincoxide semiconductor material has a luminescent peak at 4 3.357 eV.
 21. Asolid state device according to claim 20, wherein the p-type dopant isphosphorus.
 22. A solid state device according to claim 20, wherein thep-type dopant is arsenic.
 23. A solid state device according to claim20, wherein the p-type dopant is antimony.
 24. A solid state deviceaccording to claim 20, wherein the p-type dopant is bismuth.
 25. A solidstate device according to claim 20, wherein the p-type dopant is copper.26. A solid state device according to claim 20, wherein the singlecrystal zinc oxide further comprises magnesium oxide.
 27. A solid statedevice according to claim 20, wherein the single crystal zinc oxidefurther comprises cadmium oxide.
 28. A solid state device according toclaim 20, wherein the n-type semiconductor material is an n-type zincoxide.
 29. A solid state device according to claim 28, wherein then-type zinc oxide contains an n-type dopant selected from ions of Al,Ga, B, H, Yb and other rare earth elements, Y, Sc, and mixtures thereof.30. A solid state device according to claim 20, wherein the device is alight emitting diode.
 31. A solid state device according to claim 20,wherein the device is a laser diode.
 32. A solid state device accordingto claim 20, wherein the device is a field effect transistor.
 33. Asolid state device according to claim 20, wherein the device is aphotodetector.
 34. A solid state device according to claim 20, whereinthe device emits light at a wavelength in the range from about 310 nm to660 nm.
 35. A solid state device according to claim 20, wherein thedevice emits light at a wavelength of about 441.6 nm.
 36. A solid statedevice according to claim 20, wherein the device emits light at awavelength of about 325 nm.
 37. A solid state device according to claim20, wherein the single crystal zinc oxide is disposed on an amorphousself supporting substrate surface.
 38. A solid state device according toclaim 37, further comprising a barrier layer disposed between the singlecrystal zinc oxide and the amorphous self supporting substrate surface.39. A solid state device comprising a p-n junction containing a p-typezinc oxide and an n-type semiconductor material, wherein the p-type zincoxide comprises single crystal zinc oxide that is doped with a quantityof phosphorous, wherein the phosphorous dopant concentration in the zincoxide is greater than about 10¹⁶ atoms·cm⁻³, wherein semiconductorresistivity is less than about 0.5 ohm·cm, and wherein the caffiermobility is greater than about 0.1 cm²/V·s, and wherein the p-type zincoxide semiconductor material has a luminescent peak at 4 3.357 eV
 40. Asolid state device according to claim 39, wherein the p-type zinc oxidefurther comprises magnesium oxide.
 41. A solid state device according toclaim 39, wherein the p-type zinc oxide further comprises cadmium oxide.